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HARVARD Citation
Malinverni, M. et al. (n.d.). InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy. Applied physics express. p. . [Online].
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Malinverni, M. et al. (n.d.). InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy. Applied physics express. p. . [Online].