Low power consumption photoelectric coupling perovskite memristor with adjustable threshold voltage. (21st June 2021)

• Record Type: Journal Article
• Authors: Wang, Shaoxi; Zhang, Zhejia; Xiong, Yuxuan; Dong, Xiangqi; Sha, Jian; Bai, Xiaochen; Li, Wei; Yin, Yue; Wang, Yucheng
• Is Part Of: Nanotechnology. Volume 32:Number 37(2021)
• Publication Date: 2021-06-21
• Subjects: organic–inorganic halide perovskite memristor -- yttrium oxide -- low power consumption -- photoelectric coupling -- adjustable threshold voltage; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ac0667
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Organic–inorganic halide perovskites (OHPs) have been proven to possess unique optical and electrical properties, and achieved more extensive application as excellent materials for memristors in recent years. Based on the traditional OHP-based memristors, the intermediate layer of the memristor was prepared using yttrium oxide (Y2 O3 )/OHP stacking structure in this manuscript. The potential barrier between Y2 O3 and perovskite is relatively high (Δ E C = 2.13 eV) which leads to comparatively low current of the memristor, thus the power consumption can be reduced. Besides, by changing the external light conditions, one can realize sharp or slow switch between high resistance state (HRS) and low resistance state (LRS), so as to meet the requirement of multilevel data storage, which indicates its promising application prospect in information storage and biological simulation. In addition, based on characteristics of photoelectric coupling, the Y2 O3 /OHP memristor can also achieve the advantage of adjustable threshold voltage. The transition of HRS and LRS can be realized by changing the illumination condition at any voltage, which means the set and reset voltage are not fixed, so that the memristor with adjustable threshold voltage can adapt to various working conditions.