The influence of excessive H2 during barrier growth on InGaN light-emitting diodes. (23rd October 2020)

• Record Type: Journal Article
• Authors: Li, Yangfeng; Yan, Shen; Junhui, Die; Hu, Xiaotao; Song, Yimeng; Deng, Zhen; Du, Chunhua; Wang, Wenqi; Ma, Ziguang; Wang, Lu; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Jiang, Yang; Chen, Hong
• Is Part Of: Materials research express. Volume 7:Number 10(2020)
• Publication Date: 2020-10-23
• Subjects: hydrogen -- InGaN -- TDPL -- EQE -- leakage current; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/abc18f
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: The influence of excessive H2 flow during barrier growth on optical and electrical properties of InGaN light-emitting diodes (LEDs) are investigated in this study. The room temperature photoluminescence of LEDs decays with excessive H2 treatment. Temperature-dependent photoluminescence (TDPL) reveals an increase of the density and a decrease of the activation energy of deep non-radiative recombination centers in the H2 treated LEDs. The external quantum efficiency (EQE) of the LEDs suffers from excessive H2 treatment. The leakage current on the reverse and forward sides of the LEDs are reduced significantly when treated with H2, which may be due to the suppressed Poole–Frenkel effect.