Stress evolution in different growth mechanism of GaN grown by Na-flux method. (13th October 2020)

• Record Type: Journal Article
• Authors: Si, Zhiwei; Liu, Zongliang; Gu, Hong; Ren, Yujiao; Dong, Xiaoming; Gao, Xiaodong; Wang, Jianfeng; Xu, Ke
• Is Part Of: Japanese journal of applied physics. Volume 59:Number 11(2020)
• Publication Date: 2020-10-13
• Subjects: GaN -- Na-flux -- Raman -- stress evolution -- growth mechanism; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abbd7c
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The study found that homoepitaxial Na-flux GaN has a large stress at the interface, and the stress is released to a certain extent within 50 μ m in the growth direction of the Na-flux GaN. After passing through the columnar growth region, the Na-flux GaN tends to a stress-free state finally. The columnar growth mode is produced by GaN island growth, the islands nucleate and coalescence to produce tensile stress. The Na-flux GaN undergoes a columnar growth to generate tensile stress, which offsets the residual compressive stress at the interface, which is conducive to stress release.