Ultraviolet photodetector based on vertical β-Ga2O3 nanowire array on GaN substrate. (19th May 2021)

• Record Type: Journal Article
• Authors: Zeng, Chunhong; Ma, Yongjian; Kong, Mei; Zhang, Xiaodong; Lin, Wenkui; Cui, Qi; Sun, Yuhua; Zhang, Xuemin; Chen, Tiwei; Zhang, Xuan; Zhang, Baoshun
• Is Part Of: Materials research express. Volume 8:Number 5(2021)
• Publication Date: 2021-05-19
• Subjects: ultraviolet photodetector -- β-Ga2O3 nanowire array -- graphene -- GaN substrate -- self-catalytic technique; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/abff78
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: Driven by the requirement to ultraviolet detection, β -Ga2 O3 UV photodetectors have attracted great attention. Using a metal organic chemical vapor deposition (MOCVD) reactor, we grew β -Ga2 O3 nanowires array on a GaN substrate using Ga as catalyst. The density of the nanowires was optimized employing the substrate patterning technology. A UV detector based on the graphene/ β -Ga2 O3 -nanowire-array was realized by micro-fabrication techniques. The device has a wide range of UV response covering UVC-UVA band and the peak response reaches 30.82 mA W −1 at 258 nm corresponding to the band gap of β -Ga2 O3 . The rapid response speed (<1 s) is comparable to that of most reported Ga2 O3 nanowire ultraviolet photodetectors.