HF/HCl/H2O/MnO2 System for High-Performance Texturization on Multi-Crystalline Silicon. (16th November 2020)

• Record Type: Journal Article
• Authors: Liu, Huan; Zhao, Lei; Diao, Hongwei; Wang, Wenjing
• Is Part Of: ECS journal of solid state science and technology. Volume 9:Number 12(2020)
• Publication Date: 2020-11-16
• Subjects: MnO2 -- texturization -- wet acidic etching -- reflectance -- silicon etching; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/abc80c
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : We proposed a HF/HCl/H2 O system with manganese dioxide (MnO2 ) particle as the oxidant to obtain high-performance texturization on multi-crystalline silicon (mc-Si) wafers. The texturization obtained by the HF/HCl/H2 O/MnO2 system had a more uniform distribution and a lower surface reflectance than that obtained by the conventional HF/HNO3 /H2 O system, especially on the surface of diamond wire sawn (DWS) mc-Si wafers. The etching mechanism was revealed by studying the effects of the usage variation of HF, HCl and MnO2 . The etching only occurs at the locations where MnO2 particles are deposited on the silicon surface and will self-terminate with the full consumption of MnO2 . Thus the texture morphology can be easily controlled by adjusting the usage of MnO2 particles with sufficient HCl and HF. Furthermore, such method is environmentally friendly not to use HNO3 .