Enhancement of photosensitivity of thermally evaporated crystalline PbS thin films by low energy oxygen ions implantation. (28th September 2020)

• Record Type: Journal Article
• Authors: Gaur, Jyotshana; Sharma, Hitesh Kumar; Tyagi, Shrestha; Tyagi, Chetna; Vashishtha, Pargam; Sharma, Sanjeev K; Singh, Beer Pal
• Is Part Of: Nano express. Volume 1:Number 2(2020)
• Publication Date: 2020-09-28
• Subjects: effect of O-ions implantation on PbS thin films -- microstructural and optical properties -- surface roughness -- dark & photo current and photosensitivity; Nanotechnology -- Periodicals; Nanoscience -- Periodicals; 620.5
• DOI: 10.1088/2632-959X/abb878
• Languages: English
• ISSNs: 2632-959X

Abstract

Abstract: This study presents the effect of low energy (120 KeV) O-ions implantation on the photosensitivity of PbS thin films by vacuum thermal evaporator (VTE). The crystallite size ( D ) of PbS films decreased from 32.8 nm to 17.4 nm and the bandgap ( E g ) increased from 1.61 eV to 1.76 eV as the fluence increased from 0.5 × 10 16 ions cm −2 to 1.5 × 10 16 ions cm −2 . The PL spectra of O-ions implanted PbS thin films showed a dominant peak at 381 nm regardless the fluence of implantation. The photocurrent sharply increased by the implantation of O-ions (0.5 × 10 16 ions cm −2 ) due to the creation of 'shallow traps' in the forbidden gap of PbS thin films under illumination of visible light (100 mW cm −2 ). The highest photosensitivity of O-ions implanted PbS thin films was observed due to the creation of proper traps for the photoconduction for the particular dose of 0.5 × 10 16 ions cm −2 .