Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3. (11th February 2021)

• Record Type: Journal Article
• Authors: Kobayashi, Riku; Nabatame, Toshihide; Onaya, Takashi; Ohi, Akihiko; Ikeda, Naoki; Nagata, Takahiro; Tsukagoshi, Kazuhito; Ogura, Atsushi
• Is Part Of: Japanese journal of applied physics. Volume 60:Number 3(2021)
• Publication Date: 2021-02-11
• Subjects: indium oxide -- thin-film transistor -- atomic layer deposition; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abde54
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Characteristics of thin-film transistors (TFTs) with amorphous In2 O3 (InO1.2 ) and carbon-doped In2 O3 (InO1.16 C0.04 ) channels by post-metallization annealing (PMA) process were investigated. The InO1.2 TFT changed from metallic to switching behavior after PMA at 200 °C. In contrast, the InO1.16 C0.04 TFT exhibited superior properties such as a threshold voltage ( V th ) of 3.2 V and a high mobility of 20.4 cm 2 V −1 s −1 at PMA 150 °C because of the reduction of excess oxygen vacancies. A large negative V th shift was observed for the InO1.2 TFT for 10 800 s in N2 under zero bias voltage while there was no V th change for the InO1.16 C0.04 TFT.