Excellent optoelectronic applications and electrical transport behavior of the n-WO3 nanostructures/p-diamond heterojunction: a new perspective. (24th May 2021)

• Record Type: Journal Article
• Authors: Yao, Yu; Sang, Dandan; Duan, Susu; Wang, Qinglin; Liu, Cailong
• Is Part Of: Nanotechnology. Volume 32:Number 33(2021)
• Publication Date: 2021-05-24
• Subjects: n-WO3 nanostructure/p-diamond heterojunction -- optoelectronic applications -- harsh environments -- electrical transport behavior; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/abfe24
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Nanostructured n-type metal oxides/p-type boron-doped diamond heterojunctions have demonstrated a typical rectification feature and/or negative differential resistance (NDR) potentially applied in wide fields. Recently, the fabrication and electronic transport behavior of n-WO3 nanorods/p-diamond heterojunction at high temperatures were studied by Wang et al (2017 Appl. Phys. Lett. 110 052106), which opened the door for optoelectronic applications that can operate at high-temperatures, high-power, and in various harsh environments. In this perspective, an overview was presented on the future directions, challenges and opportunities for the optoelectronic applications based on the n-WO3 nanostructures/p-diamond heterojunction. We focus, in particular, on the prospects for its high temperature NDR, UV photodetector, field emission emitters, photocatalyst and optical information storage for a wide range of new optoelectronic applications.