Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone. (26th May 2021)

• Record Type: Journal Article
• Authors: Kalam, Kristjan; Rammula, Raul; Ritslaid, Peeter; Käämbre, Tanel; Link, Joosep; Stern, Raivo; Vinuesa, Guillermo; Dueñas, Salvador; Castán, Helena; Tamm, Aile; Kukli, Kaupo
• Is Part Of: Nanotechnology. Volume 32:Number 33(2021)
• Publication Date: 2021-05-26
• Subjects: atomic layer deposition -- thin films -- magnetic materials -- resistive switching; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/abfee9
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Atomic layer deposition method was used to grow thin films consisting of ZrO2 and MnO x layers. Magnetic and electric properties were studied of films deposited at 300 °C. Some deposition characteristics of the manganese(III)acetylacetonate and ozone process were investigated, such as the dependence of growth rate on the deposition temperature and film crystallinity. All films were partly crystalline in their as-deposited state. Zirconium oxide contained cubic and tetragonal phases of ZrO2, while the manganese oxide was shown to consist of cubic Mn2 O3 and tetragonal Mn3 O4 phases. All the films exhibited nonlinear saturative magnetization with hysteresis, as well as resistive switching characteristics.