Interface electronic structure and valence band dispersion of bis(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole) on polycrystalline Au electrodes. (16th June 2021)

• Record Type: Journal Article
• Authors: Nakayama, Yasuo; Sudo, Koji; Ohashi, Noboru; Kera, Satoshi; Watanabe, Yasuyuki
• Is Part Of: Electronic structure. Volume 3:Number 2(2021)
• Publication Date: 2021-06-16
• Subjects: photoelectron spectroscopy -- band dispersion -- vertical organic transistor -- organic static induction transistor -- BTQBT; Electronic structure -- Periodicals; 530.411
• DOI: 10.1088/2516-1075/ac0124
• Languages: English
• ISSNs: 2516-1075

Abstract

Abstract: Bis(1, 2, 5-thiadiazolo)- p -quinobis(1, 3-dithiole) (BTQBT) is a promising material for application in vertical organic transistor devices because of considerable energy dispersion in its valence band (VB). In this study, the electronic structure at the interface of BTQBT on polycrystalline Au electrodes was elucidated by photoelectron spectroscopy (PES). The excitation photon energy-dependence of the PES corroborated a widely dispersing VB of the solid-state BTQBT on Au. An intermolecular transfer integral of 75 meV and the hole effective mass of 4.3 m 0 were derived from the present results.