Blackbody-like infrared radiation in stacked graphene P–N junction diode. (22nd February 2021)

• Record Type: Journal Article
• Authors: Murakami, N.; Sugiyama, Y.; Ohno, Y.; Nagase, M.
• Is Part Of: Japanese journal of applied physics. Volume 60:Number SC(2021)
• Publication Date: 2021-02-22
• Subjects: graphene -- 2D material -- infrared radiation -- blackbody -- F–K phonon; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abe208
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The electrical and optical properties of a stacked graphene p–n junction were investigated. N-type and p-type graphene films epitaxially grown on a SiC substrate were directly bonded to each other in a face-to-face manner. The current–voltage characteristics of the graphene junction diode exhibited an Ohmic behavior below 20 V. The conductance increased in the bias range above 20 V and had a peak around 65 V. The emission spectrum and temperature of the graphene p–n junction were measured using Fourier-transform far-infrared (FTIR) spectroscopy and infrared bolometer array. An electrically induced blackbody-like radiation with a peak wavelength of 10.2 μ m was observed. Although the temperature change estimated using the bolometer results was 66 K at a power of 1.2 W, the peak wavelength of the FTIR spectrum was constant. An electrically induced blackbody-like far-infrared emission diode with a defined peak wavelength was successfully realized using the stacked graphene p–n junctions.