Fabrication and room temperature characterization of trilayer junctions for the development of superconducting qubits on 300 mm wafers. (1st March 2021)

• Record Type: Journal Article
• Authors: Wan, Danny; Couet, Sebastian; Piao, Xiaoyu; Souriau, Laurent; Canvel, Yann; Tsvetanova, Diana; Vangoidsenhoven, Diziana; Thiam, Arame; Pacco, Antoine; Potočnik, Anton; Mongillo, Massimo; Ivanov, Tsvetan; Jussot, Julien; Verjauw, Jeroen; Acharya, Rohith; Lazzarino, Frederic; Govoreanu, Bogdan; Radu, Iuliana P.
• Is Part Of: Japanese journal of applied physics. Volume 60:Number SB(2021)
• Publication Date: 2021-03-01
• Subjects: superconducting qubit -- Nb trilayer -- 300 mm pilot line -- Nb/Al-AlOx/Nb Josephson junctions -- Transmon qubit; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abe5bb
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We present the development of Nb/Al–AlO x /Nb trilayer stacks and the implementation of a full 300 mm process flow for the fabrication of trilayer-based superconducting qubits. Room temperature electrical characterization of tens of thousands of Josephson junctions showed good agreement between blanket resistance-area (RA) product and RA product of processed wafers. Cross-bridge Kelvin resistor structures with dimensions ranging from 200 nm to 1.2 μ m were tested and exhibited excellent yield and exceptionally low resistance variability down to <1%. This result is expected to translate to reduced qubit device variability and improved predictability of qubit transition frequencies at cryogenic temperatures.