Cite
HARVARD Citation
Tsunoda, J. et al. (2021). (111) vertical-type two-dimensional hole gas diamond MOSFETs with hexagonal trench structures. Carbon. pp. 349-357. [Online].
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Tsunoda, J. et al. (2021). (111) vertical-type two-dimensional hole gas diamond MOSFETs with hexagonal trench structures. Carbon. pp. 349-357. [Online].