High‐Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cells. Issue 3 (10th March 2021)

• Record Type: Journal Article
• Authors: Cunha, José M. V.; Oliveira, Kevin; Lontchi, Jackson; Lopes, Tomás S.; Curado, Marco A.; Barbosa, João R. S.; Vinhais, Carlos; Chen, Wei-Chao; Borme, Jérôme; Fonseca, Helder; Gaspar, João; Flandre, Denis; Edoff, Marika; Silva, Ana G.; Teixeira, Jennifer P.; Fernandes, Paulo A.; Salomé, Pedro M. P.
• Is Part Of: Solar RRL. Volume 5:Issue 3(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-03-10
• Subjects: Solar energy -- Periodicals; Photovoltaic power generation -- Periodicals; Solar energy -- Research -- Periodicals; Photovoltaic power generation -- Research -- Periodicals; Periodicals; 333.7923
• DOI: 10.1002/solr.202170036
• Languages: English
• ISSNs: 2367-198X

Abstract

Abstract : Ultrathin Solar Cells In article number 2000534, José M. V. Cunha and co‐workers applied two SiOx passivation architectures in ultrathin CIGS solar cells. Both passivation approaches resulted in devices with a higher performance compared to a reference non‐passivated device. The potential to use SiOx as passivation material, deposited by a high throughput industrial technique based in microelectronics processing, yields promising results towards high‐performance low‐cost ultrathin CIGS solar cells.