Tuning Ga Grading in Selenized Cu(In, Ga)Se2 Solar Cells by Formation of Ordered Vacancy Compound. Issue 3 (13th December 2020)

• Record Type: Journal Article
• Authors: Tu, Lung-Hsin; Cai, Chung-Hao; Lai, Chih-Huang
• Is Part Of: Solar RRL. Volume 5:Issue 3(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-12-13
• Subjects: back contact modification -- Cu(In -- Ga grading -- Ga)Se2 -- ordered vacancy compound -- selenium pressure; Solar energy -- Periodicals; Photovoltaic power generation -- Periodicals; Solar energy -- Research -- Periodicals; Photovoltaic power generation -- Research -- Periodicals; Periodicals; 333.7923
• DOI: 10.1002/solr.202000626
• Languages: English
• ISSNs: 2367-198X

Abstract

Abstract : Severe Ga accumulation at the back contact is regarded as one of the major limiting factors for high efficiency Cu(In, Ga)Se2 (CIGSe) solar cells fabricated by the sequential process. The Ga deficiency near the front surface of absorber leads to the reduction of open‐circuit voltage; however, controlling the Ga grading is quite challenging during the selenization process. Herein, the tuning of Ga profile is demonstrated by forming the ordered vacancy compound (OVC) phase at the beginning of selenization process under high Se partial pressure ( P Se ) with the precursor composed of a relatively high In content. The OVC phase formed with a columnar structure promotes Ga diffusion through Cu vacancies, resulting in Ga increase at the front side of CIGSe. However, high P Se also increases the thickness of MoSe2, significantly raising the series resistance. Thereby, a 5 nm TiN layer is deposited on top of Mo to suppress the formation of MoSe2 . In addition, the extra Na‐contained precursor is added to increase the carrier concentration because the TiN layer also blocks the Na outdiffusion from the substrate. By controlling P Se, interlayer TiN thickness, and carrier concentration, a 16.04% record high efficiency of CIGSe solar cells (sulfur‐free) via elemental Se source is achieved. Abstract : By using high selenium partial pressure and precursors with relatively low Cu/(Ga + In) (CGI) ratio, the ordered vacancy compound can be formed during the early stage of the selenization, which promotes the Ga diffusion and modifies the Ga grading. A record high efficiency of 16.04% with fill factor of 76.20% for CIGSe (S‐free) solar cells is demonstrated.