First-principles investigation of oxygen interaction with hydrogen/helium/vacancy irradiation defects in Ti3AlC2. Issue 9 (26th February 2021)

• Record Type: Journal Article
• Authors: Meng, Zhaocang; Wang, Canglong; Liu, Jitao; Wang, Yinlong; Zhu, Xiaolu; Yang, Lei; Huang, Liang
• Is Part Of: Physical chemistry chemical physics. Volume 23:Issue 9(2021)
• Page Start: 5340
• Page End: 5351
• Publication Date: 2021-02-26
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/d0cp06462a
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : First-principles calculations have been performed to investigate the interaction between solute impurity O and H/He/vacancy irradiation defects in Ti3 AlC2 . Abstract : First-principles calculations have been performed to investigate the interaction between solute impurity O and H/He/vacancy irradiation defects in Ti3 AlC2 . The formation energy and occupation of O atoms within different defects as well as the trapping progress of O/H clusters are discussed. It is found that the O atom preferentially occupies the hexahedral interstitial site (Ihex -1) in bulk Ti3 AlC2, whereas it prefers to occupy the neighbouring tetrahedral interstitial site (Itetr -2) within pre-exisiting Al monovacancy (VAl ), Al divacancy (2VAl–Al ) and the 2VAl–C divacancy composed of Al and C vacancies. The appearance of C vacancy could greatly reduce the oxygen formation energy and make an O atom more inclined to occupy the center of C vacancy. Vacancy could capture more O atoms than H/He atoms, where VAl and 2VAl–Al could hold up to fifteen and eighteen O atoms, respectively. Meanwhile, the O could also promote the formation of Al vacancy. On the other hand, O atoms tend to occupy the interstitial sites near the Al atomic layer and have attraction to Al atoms, which is likely to enable the O atoms to combine with the Al atoms to form a Al2 O3 protective layer, thus effectively inhibiting further oxidation inside the Ti3 AlC2 . In addition, the H–O exhibits repulsion interaction, but strong attraction occurs in the He–O interaction. Therefore, the O atom has an inhibitory effect on the formation of the H cluster, while it could bind more He atoms to form a large number of He bubbles. Besides, the O impurity greatly reduces the trapping ability of vacancy to H atoms, and O and He have a synergistic interaction for inhibiting the aggregation of H clusters. The present results are expected to provide a new insight into the behaviour of Ti3 AlC2 under irradiation and oxidation conditions so that structural materials could be better designed.