Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 based thin films. Issue 9 (1st May 2021)

• Record Type: Journal Article
• Authors: Liang, Hailong; Zhang, Bo; Zhou, Dayu; Guo, Xintai; Li, Yan; Lu, Yanqing; Guo, Yuanyuan
• Is Part Of: Ceramics international. Volume 47:Issue 9(2021)
• Page Start: 12137
• Page End: 12143
• Publication Date: 2021-05-01
• Subjects: Y doped HfO2 -- Dielectric film -- Phase transition -- Electronic structure; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2021.01.060
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: In this work, we introduced a simple solution processing method to prepare yttrium (Y) doped hafnium oxide (HfO2 ) based dielectric films. The films had high densities, low surface roughness, maximum permittivity of about 32, leakage current < 1.0 × 10 −7 A/cm 2 at 2 MV/cm, and breakdown field >5.0 MV/cm. In addition to dielectric performance, we investigated the influence of YO1.5 fraction on the electronic structure between Y doped HfO2 thin films and silicon (Si) substrates. The valence band electronic structure, energy gap and conduction band structure changed linearly with YO1.5 fraction. Given this cost-effective deposition technique and excellent dielectric performance, solution-processed Y doped HfO2 based thin films have the potential for insulator applications.