Back Cover Image. Issue 3 (24th March 2021)

• Record Type: Journal Article
• Authors: Di, Jiayu; Du, Jianhui; Lin, Zhenhua; Liu, Shengzhong (Frank); Ouyang, Jianyong; Chang, Jingjing
• Is Part Of: InfoMat. Volume 3:Issue 3(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-03-24
• Subjects: Materials -- Periodicals; Information technology -- Periodicals; Smart materials -- Periodicals; 620.11
• DOI: 10.1002/inf2.12179
• Languages: English
• ISSNs: 2567-3165

Abstract

Abstract : The advent of IOT has led to the emergence of massive data storage and processing problems. Resistive random access memories (RRAMs) are expected to break through Moore's law and solve the Von Neumann limit. Significant progress has been made in the field of RRAMs using lead halide perovskite as storage medium. The authors of this manuscript summarized the working principle and current research progress of perovskite‐based resistive memory, and discussed key factors hindering the development and future development prospects. (DOI: 10.1002/inf2.12162 ). Abstract : The advent of IOT has led to the emergence of massive data storage and processing problems. Resistive random access memories (RRAMs) are expected to break through Moore's law and solve the Von Neumann limit. Significant progress has been made in the field of RRAMs using lead halide perovskite as storage medium. The authors of this manuscript summarized the working principle and current research progress of perovskite‐based resistive memory, and discussed key factors hindering the development and future development prospects. (DOI: 10.1002/inf2.12162 ).