B-site acceptor doped AgNbO3 lead-free antiferroelectric ceramics: The role of dopant on microstructure and breakdown strength. Issue 3 (1st February 2021)

• Record Type: Journal Article
• Authors: Wang, Xin; Ren, Pengrong; Ren, Dong; Xie, Linfeng; Li, Tingting; Xu, Junqi; Xi, Yingxue; Yang, Chen
• Is Part Of: Ceramics international. Volume 47:Issue 3(2021)
• Page Start: 3699
• Page End: 3705
• Publication Date: 2021-02-01
• Subjects: AgNbO3 -- Microstructure -- Breakdown strength -- Doping; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2020.09.222
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: B-site aliovalent modification of AgNbO3 with a nominal composition of Ag(Nb1-x Mx )O3-x/2 (x = 0.01, M = Ti, Zr and Hf) was prepared. The effects of dopants on microstructure, dielectric, ferroelectric and conduction properties were investigated. The results indicate that the introduction of acceptor dopant does not lead to grain coarsening. Zr 4+ and Hf 4+ doping are beneficial to stabilize the antiferroelectric phase of AgNbO3 . Among all the samples, Ti 4+ doped AgNbO3 has the minimum resistivity while Hf 4+ doped AgNbO3 has the maximum resistivity, therefore, Hf 4+ doped AgNbO3 has high BDS. The XPS results indicate that the conduction behaviour is associated with the concentration of oxygen vacancies. This work hints that acceptor dopant is also effective on the microstructure control and chemical modification of AgNbO3 -based ceramics.