Cite
HARVARD Citation
Perego, M. et al. (2021). Doping of silicon with phosphorus end-terminated polymers: source characterization and dopant diffusion in SiO2. Journal of materials chemistry. 9 (11), pp. 4020-4028. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Perego, M. et al. (2021). Doping of silicon with phosphorus end-terminated polymers: source characterization and dopant diffusion in SiO2. Journal of materials chemistry. 9 (11), pp. 4020-4028. [Online].