Growth of millimeter-size single-crystal boron phosphide by eutectic melt at 5.0 GPa and 3000 °C. (March 2021)

• Record Type: Journal Article
• Authors: Liang, Wenjia; Zhang, Lu; Xiang, Xiaojun; Wang, Junpu; Zhang, Liu; Wu, Binbin; Wang, Yipeng; Zeng, Yan; Guan, Shixue; Tang, Qiqi; Peng, Fang
• Is Part Of: Solid state communications. Volume 327(2021)
• Publication Date: 2021-03
• Subjects: A. Eutectic melt -- B. Boron phosphide -- C. Single crystal -- D. High pressure and high temperature; Solid state chemistry -- Periodicals; Solid state physics -- Periodicals; Chimie de l'état solide -- Périodiques; Physique de l'état solide -- Périodiques; 530.41
• DOI: 10.1016/j.ssc.2021.114206
• Languages: English
• ISSNs: 0038-1098

Abstract

Abstract: Single-crystal boron phosphide (BP), a high-temperature semiconductor, is prepared by a eutectic melting method. Large BP single crystals (>1 mm) are synthesized at high pressure and high temperature (5.0 GPa and 3000 °C). Their growth mechanism is analyzed. Ultraviolet–visible spectroscopy and thermogravimetry/differential thermal analysis show that BP is an indirect semiconductor (2.01 eV) and has excellent thermal stability (>1200 °C). Success in the synthesis of good BP crystals offers a huge opportunity to determine their intrinsic properties and will also stimulate more research on their performance as semiconductors. Highlights: We demonstrate the melt crystallization method for synthesis of BP single crystals in a large volume cubic press We save the process of long heat preservation and We increase the synthesis efficiency of BP single crystals. The BP single crystal has a high thermal stability (>1200 °C) and is an indirect semiconductor (1.97 eV).