Inverting logic-in-memory cells comprising silicon nanowire feedback field-effect transistors. (9th March 2021)

• Record Type: Journal Article
• Authors: Park, Young-Soo; Lim, Doohyeok; Son, Jaemin; Jeon, Juhee; Cho, Kyoungah; Kim, Sangsig
• Is Part Of: Nanotechnology. Volume 32:Number 22(2021)
• Publication Date: 2021-03-09
• Subjects: silicon nanowire -- feedback field-effect transistors -- switchable memory device -- logic-in-memory -- memory hierarchy -- mixed-mode simulation; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/abe894
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: In this paper, we propose inverting logic-in-memory (LIM) cells comprising silicon nanowire feedback field-effect transistors with steep switching and holding characteristics. The timing diagrams of the proposed inverting LIM cells under dynamic and static conditions are investigated via mixed-mode technology computer-aided design simulation to verify the performance. The inverting LIM cells have an operating speed of the order of nanoseconds, an ultra-high voltage gain, and a longer retention time than that of conventional dynamic random access memory. The disturbance characteristics of half-selected cells within an inverting LIM array confirm the appropriate functioning of the random access memory array.