Self-powered and high responsivity photodetector based on a n-Si/p-GaTe heterojunction. (12th March 2021)

• Record Type: Journal Article
• Authors: Liu, Yali; Wu, Xiaoxiang; Guo, Wenxuan; Li, Mengge; Niu, Xinyue; Yao, Jiadong; Yu, Ying; Xing, Boran; Yan, Xiaoyuan; Zhang, Shucheng; Sha, Jian; Wang, Yewu
• Is Part Of: Nanotechnology. Volume 32:Number 22(2021)
• Publication Date: 2021-03-12
• Subjects: photodetectors -- n-Si/p-GaTe heterojunction -- self-powered; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/abea39
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Heterojunction integrated by two-dimensional/three-dimensional materials has shown great potential applications in optoelectronic devices because of its fast response speed, high specific detectivity and broad spectral response. In this work, the vertical n-Si/p-GaTe heterojunction has been designed and fabricated, which shows a high responsivity up to 5.73 A W −1 and a fast response time of 20 μ s at zero bias benifitting from the high efficiency of light absorption, internal photocurrent gain and strong built-in electrical field. A specific detectivity of 10 12 Jones and a broad spectral response ranging from 300 to 1100 nm can also be achieved. This work provides an alternative strategy for high-performance self-powered optoelectronic devices.