Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In, Ga)Se2 Solar Cells. (11th December 2020)

• Record Type: Journal Article
• Authors: Zhao, Yunhai; Yuan, Shengjie; Chang, Qianqian; Zhou, Zhengji; Kou, Dongxing; Zhou, Wenhui; Qi, Yafang; Wu, Sixin
• Is Part Of: Advanced functional materials. Volume 31:Number 10(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-12-11
• Subjects: Cu(In -- Ga)Se 2 -- interface recombination -- ordered vacancy compounds -- solar cells -- solution process method; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202007928
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: Solution processing of Cu(In, Ga)Se2 (CIGS) absorber makes it cost‐competitive in the photovoltaic market. It is reported that copper‐poor ordered vacancy compound (OVC) is crucial for high performance CIGS solar cells. However, in solution process method, controllable formation of OVC is unavailable and limited research has been carried out. In this work, the controllable formation of the OVC phase on the CIGS surface is successful by controlling the selenization temperature and intentional variation of Cu/(In+Ga) stoichiometry in precursors for top layers and bulk layers deposition. The effects of OVC contents on the device performance are investigated. The CIGS thin film with OVC phase exhibits a lower valence band position. Meanwhile, the CIGS devices with optimized OVC content show decreased interface defects density and better carrier collection ability. The above advantages translate into a champion PCE of 16.39% for CIGS device with OVC phase, which is the champion performance among non‐hydrazine solution‐processed CIGS solar cells. The results demonstrate that the controllable formation of OVC phase approach should make a significant contribution to the efficiency promoting of solution processed CIGS solar cells. Abstract : The controllable formation of an ordered vacancy compound (OVC) is successfully achieved through a facile solution method. By using this process, the Cu(In, Ga)Se2 (CIGS) thin film with OVC exhibits improved heterojunction quality and the interface deep defect density is dramatically decreased. Consequently, a champion device efficiency of 16.39% is obtained, which is the highest reported value among solution‐processed CIGS solar cells.