A straightforward one-pot approach to two new defect energy levels in ZnS. Issue 9 (17th February 2021)

• Record Type: Journal Article
• Authors: Yang, Xiaoman; Gu, Wenhao; Yuan, Chen; Yang, Zhicheng; Shi, Shaoqian; Liu, Zhe; Liang, Shuyu; Teng, Fei
• Is Part Of: CrystEngComm. Volume 23:Issue 9(2021)
• Page Start: 1999
• Page End: 2005
• Publication Date: 2021-02-17
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/d0ce01122c
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : ZnS with double defect energy levels shows an amazing visible light photoactivity. Abstract : In this study, for the first time, we report a straightforward one-pot method to obtain ZnS with multiple vacancies (V+ V− –ZnS). It is found that two new defect energy levels are formed by Zn vacancies and S vacancies, which are close to the valence band (VB) top and conduction band (CB) bottom, respectively. The newly formed energy levels in V+ V− –ZnS greatly enhance light absorption: 480 nm and 2.44 eV (V+ V− –ZnS) vs. 399 nm and 3.24 eV (ZnS). Moreover, V+ V− –ZnS exhibits an evidently improved charge separation efficiency. Thus, V+ V− –ZnS shows a high visible-light activity, while ZnS has no response to visible light. This method is simple, and could be extended to mass production.