ZrOX insertion layer enhanced switching and synaptic performances of TiOX-based memristive devices. Issue 1 (February 2021)

• Record Type: Journal Article
• Authors: Chang, Lung-Yu; Simanjuntak, Firman Mangasa; Gapsari, Femiana; Prodromakis, Themis; Tseng, Tseung-Yuen
• Is Part Of: IOP conference series. Volume 1034:Issue 1(2021)
• Publication Date: 2021-02
• Subjects: memristive -- data storage -- TiO2-based devices -- artificial synapses; Materials science -- Periodicals; 620.1105
• DOI: 10.1088/1757-899X/1034/1/012142
• Languages: English
• ISSNs: 1757-8981

Abstract

Abstract: The impact of ZrOx material serving as an electro-thermal modulation layer (ETML) in the TiN/Ti/TiOx/TiN memristive device structure is investigated. Although the introduction of the ETML increases the total thickness of the device resulting in the increase of forming voltage, it helps to generate weak filaments. The formation of weak filaments in analog memristive devices is preferable to ensure stable switching cycles and epoch training. The device made with ETML performs stable endurance for more than 600 cycles with an On/Off ratio of approximately one order of magnitude; moreover, the device exhibits uniform potentiation and depression with low nonlinearity.