Cite
HARVARD Citation
Rhazi, R. et al. (2021). Improvement of critical temperature of niobium nitride deposited on 8-inch silicon wafers thanks to an AlN buffer layer. Superconductor science & technology. p. . [Online].
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Rhazi, R. et al. (2021). Improvement of critical temperature of niobium nitride deposited on 8-inch silicon wafers thanks to an AlN buffer layer. Superconductor science & technology. p. . [Online].