Cite
HARVARD Citation
Sun, Z. et al. (n.d.). Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer. Japanese journal of applied physics. p. . [Online].
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Sun, Z. et al. (n.d.). Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer. Japanese journal of applied physics. p. . [Online].