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HARVARD Citation
Taniyama, Y. et al. (n.d.). Dependence of polarity inversion on V/III ratio in −c-GaN growth by oxide vapor phase epitaxy. Japanese journal of applied physics. p. . [Online].
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Taniyama, Y. et al. (n.d.). Dependence of polarity inversion on V/III ratio in −c-GaN growth by oxide vapor phase epitaxy. Japanese journal of applied physics. p. . [Online].