Sputter epitaxy of heavily doped p+/n+ Ge film on Si(100) by cosputtering with Al/Sb for solar cell application. (8th July 2015)

• Record Type: Journal Article
• Authors: Yeh, Wenchang; Matsumoto, Akihiro; Sugihara, Keisuke
• Is Part Of: Japanese journal of applied physics. Volume 54:Number 8(2015:Aug.)Supplement 1
• Publication Date: 2015-07-08
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.54.08KD08
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Heavily doped p + or n + Ge films were grown on Si substrates by sputter epitaxy. Ge was cosputtered with Al or Sb to add dopant impurities. The maximum carrier densities were 1.0 × 10 21 for p-type films and 8.4 × 10 19 cm −3 for n-type films. The activation ratio of Sb was 56%. A pn junction diode was fabricated on a Si(100) substrate; it exhibited a good rectifying property with an on/off ratio of 529.