Reliability tests of electroless barriers against copper diffusion under bias-temperature stress with n- and p-type substrates. (30th March 2016)

• Record Type: Journal Article
• Authors: Ueno, Kazuyoshi; Fujishima, Shota; Yamashita, Makoto; Mitsumori, Akiyoshi
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 5(2016:May)
• Publication Date: 2016-03-30
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.056501
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: To investigate the similarity and difference of substrate conduction type in the time-dependent dielectric breakdown (TDDB) tests for the barrier integrity against Cu diffusion under bias-temperature stress (BTS), the TDDB reliability of electroless NiB and CoWP/NiB was determined by metal oxide semiconductor (MOS) structures on n-type Si (n-Si) substrates, and the test results were compared with those using p-type Si (p-Si) substrates. The TDDB results and mechanism were observed to be qualitatively the same as Cu diffusion for both conduction types. However, the TDDB lifetime using p-Si was found to be potentially shorter because of the reverse bias conditions than that using n-Si under the forward bias conditions.