Effect of Al doping concentration on the electrical and optical properties of sol–gel derived Zn0.87Mg0.13O thin film. (22nd July 2015)

• Record Type: Journal Article
• Authors: Meng, Lei; Miyajima, Shinsuke; Konagai, Makoto
• Is Part Of: Japanese journal of applied physics. Volume 54:Number 8(2015:Aug.)Supplement 1
• Publication Date: 2015-07-22
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.54.08KB09
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Zn0.87 Mg0.13 O thin film was developed by the sol–gel process. The effect of the Al doping concentration on the electrical and optical properties of Zn0.87 Mg0.13 O thin film was investigated. The lowest resistivity of 7.96 × 10 −3 Ω·cm with an optical bandgap energy of 3.64 eV was achieved at a doping concentration of 0.8 mol % in solution (0.6 at. % in film). Al doping contributes to the decrease of resistivity and the increase of optical bandgap energy, whereas heavy doping of greater than 0.8 mol % shows detrimental effects on the resistivity and film crystallinity. The mobility is dominated by grain boundary scattering.