Cite
HARVARD Citation
Yen, S. et al. (n.d.). High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer. Japanese journal of applied physics. p. . [Online].
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Yen, S. et al. (n.d.). High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer. Japanese journal of applied physics. p. . [Online].