Fabrication of two-color surface emitting device of a coupled vertical cavity structure with InAs quantum dots formed by wafer bonding. (18th March 2016)

• Record Type: Journal Article
• Authors: Ota, Hiroto; Lu, Xiangmeng; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 4(2016:Apr.)Supplement 4
• Publication Date: 2016-03-18
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.04EH09
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We fabricated a two-color surface emitting device of a coupled cavity structure, which is applicable to terahertz light source. GaAs/AlGaAs vertical multilayer cavity structures were grown on (001) and (113)B GaAs substrates and the coupled multilayer cavity structure was fabricated by wafer bonding them. The top cavity contains self-assembled InAs quantum dots (QDs) as optical gain materials for two-color emission of cavity-mode lights. The bonding position was optimized for the equivalent intensity of two-color emission. We formed a current injection structure, and two-color emission was observed by current injection, although no lasing was observed.