Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5 µm cw and pulse excitation. (23rd March 2016)

• Record Type: Journal Article
• Authors: Murakumo, Keisuke; Yamaoka, Yuya; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 4(2016:Apr.)Supplement 4
• Publication Date: 2016-03-23
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.04EH12
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We fabricated a photoconductive antenna structure utilizing Er-doped InAs quantum dot layers embedded in strain-relaxed In0.35 Ga0.65 As layers on a GaAs substrate. Mesa-shaped electrodes for the antenna structure were formed by photolithography and wet etching in order to suppress its dark current. We measured the photocurrent with the excitation of ∼1.5 µm cw and femtosecond pulse lasers. Compared with the dark current, the photocurrent was clearly observed under both cw and pulse excitation conditions and almost linearly increased with increasing excitation power in a wide range of magnitudes from 10 W/cm 2 to 10 MW/cm 2 order.