Photovoltaic properties of axial-junction silicon nanowire solar cells with integrated arrays. (13th July 2015)

• Record Type: Journal Article
• Authors: Kanematsu, Daiji; Yata, Shigeo; Terakawa, Akira; Tanaka, Makoto; Konagai, Makoto
• Is Part Of: Japanese journal of applied physics. Volume 54:Number 8(2015:Aug.)Supplement 1
• Publication Date: 2015-07-13
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.54.08KA09
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Wide-gap Si nanowire (SiNW) solar cells that use the quantum size effect require a p–n junction to be formed inside wires with a diameter smaller than 4 nm. To realize this, we developed a device integration process and confirmed power generation, for the first time, by an axial-junction SiNW solar cell with a diameter of 30 nm and a device area of 1 mm 2 . We confirmed that such a SiNW solar cell had almost the same open-circuit voltage and low short-circuit current density as a bulk Si solar cell. We also investigated the problems related to SiNW solar cells by measuring the functioning SiNW density.