Enhanced interfacial reaction of silicon carbide fillers onto the metal substrate in carbon nanotube paste for reliable field electron emitters. (15th February 2021)

• Record Type: Journal Article
• Authors: Go, Eunsol; Kim, Jae-Woo; Lee, Jeong-Woong; Ahn, Yujung; Jeong, Jin-Woo; Kang, Jun-Tae; Park, Sora; Yun, Ki Nam; Kim, Seong Jun; Kim, Sunghee; Yeon, Ji-Hwan; Song, Yoon-Ho
• Is Part Of: Nanotechnology. Volume 32:Number 19(2021)
• Publication Date: 2021-02-15
• Subjects: field electron emission -- carbon nanotube (CNT) -- CNT paste-emitter -- silicon carbide (SiC) filler -- pulverization -- interfacial reaction; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/abe1ef
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Adhesion of carbon nanotube (CNT) onto a cathode substrate is very crucial for field electron emitters that are operating under high electric fields. As a supporting precursor of CNT field emitters, we adopted silicon carbide (SiC) nano-particle fillers with Ni particles and then enhanced interfacial reactions onto Kovar-alloy substrates through the optimized wet pulverization process of SiC aggregates for reliable field electron emitters. As-purchased SiC aggregates were efficiently pulverized from 20 to less than 1 micro-meter in a median value (D50). CNT pastes for field emitters were distinctively formulated by a mixing process of the pulverized SiC aggregates and pre-dispersed CNTs. X-ray photoelectron spectroscopy studies showed that the optimally pulverized SiC-CNT paste-emitter had a stronger Si 2p 3/2 signal in the Ni2 Si phase than the as-purchased one. The Si 2p 3/2 signal would represent interfacial reaction of the SiC nano-particle onto Ni from the CNT paste and the Kovar substrate, forming the supporting layer for CNT emitters. The optimal paste-emitter even in a vacuum-sealed tube exhibited a highly reliable field emission current with a high current density of 100 mA cm −2 for over 50 h along with good reproducibility. The enhanced interfacial reaction of SiC filler onto the metal substrates could lead to highly reliable field electron emitters for vacuum electronic devices.