Compliance current controlled volatile and nonvolatile memory in Ag/CoFe2O4/Pt resistive switching device. (12th February 2021)

• Record Type: Journal Article
• Authors: Munjal, Sandeep; Khare, Neeraj
• Is Part Of: Nanotechnology. Volume 32:Number 18(2021)
• Publication Date: 2021-02-12
• Subjects: CoFe2O4 -- irreversible resistive switching -- volatile and non-volatile resistive switching -- valence change memory -- electrochemical metallization; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/abdd5f
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: We report on the resistive memory effects of a Ag/CoFe2 O4 /Pt device and a deterministic conversion between volatile and nonvolatile resistive switching (RS) memory through the tuning of current compliance ( I CC ). For the smaller I CC (10 −4 A) the device exhibits volatile RS behavior with an atomically sized conducting filament showing the quantum conductance. For an intermediate I CC (10 −2 A) nonvolatile bipolar RS behavior is observed, which could originate from the formation and rupture of filament consisting of Ag ions. The high resistance state (HRS) of the device shows a semiconducting conduction mechanism, whereas the low resistance state (LRS) was found to be Ohmic in nature. The temperature dependent resistance studies and magnetization studies indicated that the electrochemical metallization plays a dominant role in the resistive switching process for volatile and nonvolatile modes through the formation of Ag conducting filaments. For higher I CC (10 −1 A) the device permanently switches to LRS. The irreversible RS memory behaviors, observed for higher I CC, could be attributed to the formation of a thick and stable conducting channel formed of oxygen vacancies and Ag ions. The compliance current controlled resistive switching modes with a large memory window make the present device a potential candidate to pave the way for future resistive switching devices.