Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates. Issue 5 (11th January 2021)

• Record Type: Journal Article
• Authors: Sun, Yuanhao; Xu, Fujun; Zhang, Na; Lang, Jing; Wang, Jiaming; Liu, Baiyin; Wang, Liubing; Xie, Nan; Fang, Xuzhou; Kang, Xiangning; Qin, Zhixin; Yang, Xuelin; Wang, Xinqiang; Ge, Weikun; Shen, Bo
• Is Part Of: CrystEngComm. Volume 23:Issue 5(2021)
• Page Start: 1201
• Page End: 1206
• Publication Date: 2021-01-11
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/d0ce01491e
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : Growth of AlGaN-based multiple quantum wells (MQWs) with an IQE > 80% at room temperature has been realized on nano-patterned sapphire substrates. A DUV-LED device is then fabricated taking such high IQE MQWs as the active region. Abstract : Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions including the V/III ratio and Si doping level, high-efficiency AlGaN-based MQWs with an internal quantum efficiency (IQE) greater than 80% at room temperature are realized with an emission wavelength shorter than 280 nm. Taking such high IQE MQWs as the active region, a deep-ultraviolet light-emitting-diode (DUV-LED) device is fabricated and presents single peak emission with a wavelength of 276.1 nm. The light output power (LOP) of this device reaches 17.3 mW at an injection current of 100 mA, presenting an excellent device performance.