Femtosecond laser single step, full depth cutting of thick silicon sheets with low surface roughness. (June 2021)
- Record Type:
- Journal Article
- Title:
- Femtosecond laser single step, full depth cutting of thick silicon sheets with low surface roughness. (June 2021)
- Main Title:
- Femtosecond laser single step, full depth cutting of thick silicon sheets with low surface roughness
- Authors:
- Li, Zhaoqing
Allegre, Olivier
Li, Qianliang
Guo, Wei
Li, Lin - Abstract:
- Highlights: Femtosecond laser through cutting of silicon sheets shows a surface roughness of 191 nm Ra. P- and S-polarization have been compared. In both cases, the sidewall quality can be improved. The effect of laser polishing of sidewall is discussed. Abstract: Separation of silicon wafers is an integral part of semiconductor device manufacture. The widely used mechanical separation methods produce large kerf widths and micro-cracks. Existing laser separation, singulation and dicing methods can reduce cutting kerf widths, but usually involve multiple steps. Although single step laser through cutting by ablation has been reported before, surface roughness is usually poor. This paper presents a method for single step, full-depth cutting of silicon wafer sheets of 200 µm in thickness with an 800 nm wavelength femtosecond-pulse laser focused using a microscope objective lens under ambient condition. By introducing parallel scan lines, through cut is realized with an excellent sidewall full area roughness of 191 nm Ra, which is much better than that of reported previously in laser through-cutting of thick silicon sheets of similar thickness. It is found that by increasing the number of overscan, pulse energy, or number of parallel scan lines, the sidewall surface roughness reduces and the kerf edge straightness at the bottom surface is improved. The effects of p- and s-polarization on cutting quality are compared. Sidewall quality can be improved by appropriate selection ofHighlights: Femtosecond laser through cutting of silicon sheets shows a surface roughness of 191 nm Ra. P- and S-polarization have been compared. In both cases, the sidewall quality can be improved. The effect of laser polishing of sidewall is discussed. Abstract: Separation of silicon wafers is an integral part of semiconductor device manufacture. The widely used mechanical separation methods produce large kerf widths and micro-cracks. Existing laser separation, singulation and dicing methods can reduce cutting kerf widths, but usually involve multiple steps. Although single step laser through cutting by ablation has been reported before, surface roughness is usually poor. This paper presents a method for single step, full-depth cutting of silicon wafer sheets of 200 µm in thickness with an 800 nm wavelength femtosecond-pulse laser focused using a microscope objective lens under ambient condition. By introducing parallel scan lines, through cut is realized with an excellent sidewall full area roughness of 191 nm Ra, which is much better than that of reported previously in laser through-cutting of thick silicon sheets of similar thickness. It is found that by increasing the number of overscan, pulse energy, or number of parallel scan lines, the sidewall surface roughness reduces and the kerf edge straightness at the bottom surface is improved. The effects of p- and s-polarization on cutting quality are compared. Sidewall quality can be improved by appropriate selection of beam polarization and cutting speed. The mechanisms involved are discussed. … (more)
- Is Part Of:
- Optics & laser technology. Volume 138(2021)
- Journal:
- Optics & laser technology
- Issue:
- Volume 138(2021)
- Issue Display:
- Volume 138, Issue 2021 (2021)
- Year:
- 2021
- Volume:
- 138
- Issue:
- 2021
- Issue Sort Value:
- 2021-0138-2021-0000
- Page Start:
- Page End:
- Publication Date:
- 2021-06
- Subjects:
- Silicon wafer -- Full depth cutting -- Femtosecond laser -- Parallel scan lines -- Sidewall roughness -- Polarization
Optics -- Periodicals
Lasers -- Periodicals
Electronic journals
621.366 - Journal URLs:
- http://www.sciencedirect.com/science/journal/00303992 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.optlastec.2020.106899 ↗
- Languages:
- English
- ISSNs:
- 0030-3992
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 6273.440000
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