Significant improvement of thermal conductivity and bandgap energy blue shift in annealed GaInAsSb/GaSb. (May 2021)

• Record Type: Journal Article
• Authors: Ilahi, S.; Khalfaoui, A.; Genty, F.; Yacoubi, N.
• Is Part Of: Optics & laser technology. Volume 137(2021)
• Publication Date: 2021-05
• Subjects: PDS technique -- Thermal conductivity -- Bandgap energy of GaInAsSb -- GaInAsSb active layer; Optics -- Periodicals; Lasers -- Periodicals; Electronic journals; 621.366
• DOI: 10.1016/j.optlastec.2020.106819
• Languages: English
• ISSNs: 0030-3992

Abstract

Highlights: Band gap energy is blue shifted of 30 meV during annealing process. Absorption coefficient is slightly decreased in respect of annealing time. Thermal conductivity have been measured using photothermal deflection. spectroscopy PDS. The best Thermal conductivity value have been found for GaInAsSb/GaSb annealed for 60 min. Abstract: This paper deals with thermal annealing time effects on thermal conductivity and optical properties of GaInAsSb grown on GaSb substrate. An increased thermal conductivity as high as 13 W/mK for GaInAsSb layers annealed during 60 min could be measured by photothermal deflection spectroscopy technique (PDS). In addition, a blue shift around 30 meV for as grown GaInAsSb layer compared to the annealed one for 60 min could be put in evidence. From an other hand, the amplitudes signal of PDS reveal a multiple reflection as function of wavelength which appear for all annealed GaInAsSb. Such multiple reflections reflect both a high crystalline quality of the layer and sharp interfaces as well as a good lattice matching between the layer and the substrate. A slight decrease in absorption coefficient is however related to the increase of the reflection coefficient with annealing time.