Mixed-dimensional CsPbBr3@ZnO heterostructures for high-performance p-n diodes and photodetectors. (February 2021)

• Record Type: Journal Article
• Authors: Liu, Jia; Liu, Fengjing; Liu, Haining; Yue, Junyi; Jin, Jiyou; Impundu, Julienne; Liu, Hui; Yang, Zhu; Peng, Zhisheng; Wei, Haonan; Jiang, Chao; Li, Yong Jun; Xie, Liming; Sun, Lianfeng
• Is Part Of: Nano today. Volume 36(2021)
• Publication Date: 2021-02
• Subjects: Metal halide perovskites -- Zinc oxides -- Heterojunctions -- P-n diodes -- Photodetectors; Nanotechnology -- Periodicals; Nanosciences -- Périodiques; 620.505
• DOI: 10.1016/j.nantod.2020.101055
• Languages: English
• ISSNs: 1748-0132

Abstract

Abstract: Mixed one-dimensional (1D) and three-dimensional (3D) heterostructures, with synergistic advantages of different dimensionalities, have shown unique optical properties due to their large junction areas and high absorption cross-sections, which may also bring superior electrical and optoelectronic performances. However, due to the challenge in designing and constructing a proper 1D-3D p-n junction, their electronic properties and potential application are still unclear. Here, a type of 1D-3D ZnO/CsPbBr3 p-n junction is constructed by liquid-phase growth of crystalline CsPbBr3 microplates on ZnO nanowires, which exhibit excellent properties of p-n diode and serve as high-performance rectifier and photodetector. As a rectifier, it shows characteristics of ambipolar transfer and its rectification ratio reaches up to 10 6 . As a photodetector, it covers light from ultraviolet to visible light. High photoelectric switching ratio (10 7 ), responsivity (3.5 × 10 3 A/W), detectivity (6.6 × 10 13 Jones) and external quantum efficiency (1.7 × 10 6 %) are obtained under 254 nm light illumination. Meanwhile, the switching ratio, responsivity, detectivity and external quantum efficiency are 10 3, 41.5 A/W, 4.96 × 10 12 Jones and 1.086 × 10 3 %, respectively, under 473 nm laser illumination. The decay length of photo-generated carriers in ZnO/CsPbBr3 heterojunction is demonstrated longer than that in original CsPbBr3 crystal, which is further controlled by adjusting the potential barriers between the CsPbBr3 and ZnO with a tunable external electric field. Graphical Abstract: ga1 Highlights: ● Self-assembled 1D-3D ZnO/CsPbBr3 heterostructure for high-performance p-n diodes and photodetector from UV to visible light. ● Photoelectric switching ratio up to 10 7, responsivity up to 3.5 × 10 3 A/W, detectivity up to 6.6 × 10 13 Jones. ● The decay length of photo-generated carriers in ZnO/CsPbBr3 heterojunction is demonstrated longer than that in original CsPbBr3 crystal.