Selective Etching of (111)B‐Oriented AlxGa1−xAs‐Layers for Epitaxial Lift‐Off. Issue 3 (2nd November 2020)

• Record Type: Journal Article
• Authors: Henksmeier, Tobias; Eppinger, Martin; Reineke, Bernhard; Zentgraf, Thomas; Meier, Cedrik; Reuter, Dirk
• Other Names: Hammar Mattias guestEditor.; Hallén Anders guestEditor.; Lourdudoss Sebastian guestEditor.
• Is Part Of: Physica status solidi. Volume 218:Issue 3(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-11-02
• Subjects: epitaxial lift-off -- GaAs/AlxGa1−xAs heterostructures -- selective etching; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202000408
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : GaAs‐(111)‐nanostructures exhibiting second harmonic generation are new building blocks in nonlinear optics. Such structures can be fabricated through epitaxial lift‐off using selective etching of Al‐containing layers and subsequent transfer to glass substrates. Herein, the selective etching of (111)B‐oriented Al x Ga1− x As sacrificial layers (10–50 nm thick) with different aluminum concentrations ( x = 0.5–1.0) in 10% hydrofluoric acid is investigated and compared with standard (100)‐oriented structures. The thinner the sacrificial layer and the lower the aluminum content, the lower the lateral etch rate. For both orientations, the lateral etch rates are in the same order of magnitude, but some quantitative differences exist. Furthermore, the epitaxial lift‐off, the transfer, and the nanopatterning of thin (111)B‐oriented GaAs membranes are demonstrated. Atomic force microscopy and high‐resolution X‐ray diffraction measurements reveal the high structural quality of the transferred GaAs‐(111) films. Abstract : The selective etching of (111)B‐oriented Al x Ga1− x As sacrificial layers in 10% hydrofluoric acid is investigated systematically and compared with standard (100)‐oriented samples. Both orientations show overall a similar behavior, but slight differences in etch rates and Al‐content influence are observed. Using the selective etching, thin (111)B‐oriented GaAs membranes are lifted‐off from their substrates, transferred to glass substrates, and are nanopatterned.