Cite
HARVARD Citation
Naqi, M. et al. (2021). Pulsed Gate Switching of MoS2 Field‐Effect Transistor Based on Flexible Polyimide Substrate for Ultrasonic Detectors. Advanced functional materials. p. n/a. [Online].
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Naqi, M. et al. (2021). Pulsed Gate Switching of MoS2 Field‐Effect Transistor Based on Flexible Polyimide Substrate for Ultrasonic Detectors. Advanced functional materials. p. n/a. [Online].