Direct Electroless Deposition of Nickel onto Silicon Nitride Ceramic: A Novel Approach for Copper Metallization of Micro‐/Nano‐fabricated Devices. Issue 2 (6th October 2020)

• Record Type: Journal Article
• Authors: Zeb, Gul; Duong, Thi Luong; Balazinski, Marek; Le, Xuan Tuan
• Is Part Of: Advanced engineering materials. Volume 23:Issue 2(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-10-06
• Subjects: autocatalytic nickel deposition -- copper electroplating -- diazonium-based amination -- direct modification -- filling of micro-nanostructures; Materials -- Periodicals; 620.11
• DOI: 10.1002/adem.202000598
• Languages: English
• ISSNs: 1438-1656

Abstract

Abstract : Current surface modification chemistry of silicon nitride (Si3 N4 ) in the fabrication of micro/nano systems (MEMS/NEMS) mainly relies on multistep chemical processes, essentially consisting of a surface pretreatment and a challenging silanization procedure. Although direct modification of Si3 N4 surface has rarely been reported in the literature, here a simple surface functionalization strategy using diazonium chemistry in open air and at room temperature, which provides a practical solution to directly attach aminophenyl groups to pristine silicon nitride without altering its intrinsic properties, is described. These strongly grafted amine‐terminated groups are easily activated to become nuclei for initializing electroless nickel plating (autocatalytic nickel deposition). This electroless nickel plating of silicon nitride while avoiding the multiplicity and complexity of the process steps is ideal for its integration into a typical MEMS/NEMS process flow. In a possible integration scheme, due to its suitable properties, this nickel film serves as a conducting seed layer for the electrolytic deposition of copper to fill the microdevices, thereby avoids the use of typically employed expensive vacuum processes. Abstract : This work provides a silane‐free approach for the amination of silicon nitride at room temperature and open air. Electroless nickel plating can be easily achieved onto the aminated Si3 N4 surface. The obtained Ni–B film can be used as a conductive seed layer for copper electroplating. Thus, a new concept for integrating Si3 N4 barrier into the copper metallization of microsystems is given.