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HARVARD Citation
Sharma, B. et al. (2021). Ab-initio study of LD-HfO2, Al2O3, La2O3 and h-BN for application as dielectrics in MTJ memory device. Superlattices and microstructures. p. . [Online].
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Sharma, B. et al. (2021). Ab-initio study of LD-HfO2, Al2O3, La2O3 and h-BN for application as dielectrics in MTJ memory device. Superlattices and microstructures. p. . [Online].