Flexible organic ion-gated transistors with low operating voltage and light-sensing application. (7th January 2021)

• Record Type: Journal Article
• Authors: Azimi, Mona; Subramanian, Arunprabaharan; Roslan, Nur Adilah; Cicoira, Fabio
• Is Part Of: JPhys materials. Volume 4:Number 2(2021)
• Publication Date: 2021-01-07
• Subjects: ion-gated transistor -- donor–acceptor conjugated copolymer -- poly[4-(4, 4-dihexadecyl 4H-cyclopenta[1, 2-b:5, 4-b′]-dithiophen-2-yl)-alt[1, 2, 5]thiadiazolo[3, 4c]pyridine](PCDTPT) -- flexible electronics -- Ionic liquids; Solid state physics -- Periodicals; Materials science -- Periodicals; 530.41
• DOI: 10.1088/2515-7639/abd018
• Languages: English
• ISSNs: 2515-7639

Abstract

Abstract: Ion-gated transistors are attracting significant attention due to their low operating voltage (<1 V) and modulation of charge carrier density by ion-gating media. Here we report flexible organic ion-gated transistors based on the high mobility donor–acceptor conjugated copolymer poly[4-(4, 4-dihexadecyl 4H-cyclopenta[1, 2-b:5, 4-b′]-dithiophen-2-yl)-alt[1, 2, 5]thiadiazolo[3, 4c]pyridine](PCDTPT) and the ionic liquid [1-ethyl-3 methylimidazolium bis(trifluoromethylsulfonyl)imide] as the ion-gating medium. Electrical characteristics of devices made on both [rigid (SiO2 /Si) and flexible (polyimide (PI))] substrates showed very similar values of hole mobility (∼1 cm 2 V −1 s −1 ) and ON–OFF ratio (∼10 5 ). Flexible ion-gated transistors showed good mechanical stability at different bending curvature radii and under repetitive bending cycles. The mobility of flexible ion-gated transistors remained almost unchanged upon bending. After 1000 bending cycles the mobility decreased by 20% of its initial value. Flexible photodetectors based on PCDTPT ion-gated transistors showed photosensitivity and photoresponsivity values of 0.4 and 93 AW −1 .