Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer. Issue 3 (3rd February 2021)

• Record Type: Journal Article
• Authors: Moench, Stefan; Müller, Stefan; Reiner, Richard; Waltereit, Patrick; Czap, Heiko; Basler, Michael; Hückelheim, Jan; Kirste, Lutz; Kallfass, Ingmar; Quay, Rüdiger; Ambacher, Oliver
• Other Names: Hammar Mattias guestEditor.; Hallén Anders guestEditor.; Lourdudoss Sebastian guestEditor.
• Is Part Of: Physica status solidi. Volume 218:Issue 3(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-02-03
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202170014
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Semiconductor Superlattices The picture shows a monolithic power converter, fabricated in a lateral AlGaN/GaN‐on‐Si process on an improved AlN/GaN super‐lattice buffer epitaxy. The super‐lattice reduces vertical leakage and back‐gating effects compared to step‐graded buffers. This improved integration technology allows 98.8% efficient dc‐dc conversion on a single chip. More details can be found in article number 2000404 by Stefan Moench and co‐workers.