Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film. Issue 2 (18th December 2020)

• Record Type: Journal Article
• Authors: Song, Longfei; Schenk, Tony; Defay, Emmanuel; Glinsek, Sebastjan
• Is Part Of: Materials advances. Volume 2:Issue 2(2021)
• Page Start: 700
• Page End: 705
• Publication Date: 2020-12-18
• Subjects: 620.11
• DOI: 10.1039/d0ma00872a
• Languages: English
• ISSNs: 2633-5409

Abstract

Abstract : Highly conductive (conductivity 620 S cm −1 ) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics. Abstract : Combustion synthesis is a well-known method for synthesis of transparent metal oxide thin films at low temperature (<400 °C). However, their functional properties are often inferior due to high residual porosity originating from a release of large amounts of gaseous products during combustion reaction. In this paper, indium tin oxide (ITO) transparent conductive oxide thin films are prepared through combustion synthesis at 350 °C and the porosity issue is explored via multilayer deposition. When the thickness of individual layers is downscaled from 12 to 3 nm, the density increases from 5.8 to 7.0 g cm −3 and porosity decreases from 20 to 3%. This causes a strong boost of conductivity σ f from 220 to 620 S cm −1, the latter being one of the highest values ever reported for low-temperature processed ITO films. The effectiveness of this approach is attributed to a large specific surface area of thinner individual layers, which strongly enhances gas transport during the combustion process. We also show that improved crystallinity and a strong increase in tensile in-plane stress strongly contribute to the boost in conductivity.